DB004404-集成电路的器件和工艺

研究生课程开设申请表

 开课院（系、所）：yl23455永利官网       

 课程申请开设类型： 新开□     重开 √     更名□（请在□内打勾，下同）

一、课程介绍（含教学目标、教学要求等）（300字以内）

 本课程为半导体器件或集成电路设计方面专业的硕士研究生而开设，同时面向高年级本科生和其他电路设计人员。课程将介绍集成电路设计中硅工艺，砷化钾工艺，锗硅工艺器件材料、模型、结构方面的知识，使学生对于半导体器件有全面认识，有助于今后集成电路的设计。

二、教学大纲（含章节目录）：（可附页）

1. Introductions

2. Si CMOS processing and devices

CMOS

SOI

     SiGe HEMT and Strain Si CMOS

3. GaAs and other compound semiconductor materials and devices

GaAs HBT

GaAs HEMT

OEIC - Optoelectronics devices:

4. Other semiconductor materials and devices： SiGe， SiC， and GaN。

SiGe HBT and BiCMOS

SiC and GaN wide bandgap semiconductors

三、教学周历

四、主讲教师简介：

 黄风义,男,教授,博士生导师。1964年出生。1986年毕业于北京大学，获学士学位。1988年在复旦大学获硕士学位。同年获得 “李政道物理学奖”到英国巴斯大学(Univ. of Bath, England)就读。1991年到宜利诺斯大学香槟分校(UIUC)攻读博士学位，并于1994年获得博士学位。毕业后到加利福尼亚大学洛杉矶分校电子工程系做博士后。1997年进入美国IBM，担任高级半导体技术中心ASTC高级工程师。2001年，被聘为中国科学院半导体研究所中国科学院“百人计划”特聘研究员，并担任半导体研究所微电子中心兼职副主任。2002年受聘yl23455永利官网无线电工程系兼职教授。2003年长江学者奖励计划特聘教授,担任yl23455永利官网教授，博士生导师，并担任yl23455永利官网射频与光电集成电路研究所副所长。

 在国际一流杂志上发表了40多篇论文，包括物理方面最著名的 《物理评论通讯 (Phys. Rev. Lett) 》，《国际电子器件年会报告文集(IEEE IEDM) 》，《应用物理通讯 (Appl.Phys.Lett.) 》，及Phys. Rev., J. Appl., Phys, J. Phys., IEEE Photonic Technology Letters, IEE Electronics Letters，和Physics Letters等。论文被SCI收录46篇，被他引500多篇次，EI收录27篇。在英国物理学会出版社出版的《薄膜工艺和技术手册》上著有两章有关锗硅器件和工艺技术的专著章节。申请了十多项美国专利。多次在国际会议上作报告或特邀报告，并担任几个国际上有影响的学术刊物的特约审稿人。在微电子器件模型方面的成果发表在IEEE JSSC<固态线路杂志>，并被中国科技核心期刊《科技导报》评为30项“2006年中国重大科学进展”之一，是其中6项“2006年中国高新技术基础研究领域重大进展”之一。

 目前主要的研究方向包括深亚微米器件模型和参数提取以及射频集成电路设计等。

五、任课教师信息（包括主讲教师）：

Application Form For Opening Graduate Courses

School (Department/Institute)：School of Information Science and Engineering

Course Type: New Open □   Reopen√    Rename □（Please tick in □, the same below）

1. Course Introduction (including teaching goals and requirements) within 300 words:

This course is offered for MS students major in semiconductor device and IC design, as well as senior students and other circuit designers. The course will introduce technology of materials, modeling and structure of Si, GaAs and SiGe process, and give a full cognition of IC device for students, helping them in future IC designs.

2. Teaching Syllabus (including the content of chapters and sections. A sheet can be attached):

1．Introductions

2．Si CMOS processing and devices

2.1 CMOS

2.2 SOI

     2.3 SiGe HEMT and Strain Si CMOS

3．GaAs and other compound semiconductor materials and devices

3.1 GaAs HBT

3.2 GaAs HEMT

3.3 OEIC - Optoelectronics devices:

4．Other semiconductor materials and devices： SiGe， SiC， and GaN。

4.1 SiGe HBT and BiCMOS

4.2 SiC and GaN wide bandgap semiconductors

3. Teaching Schedule:

Note: 1.Above one, two, and three items are used as teaching Syllabus in Chinese and announced on the Chinese website of Graduate School. The four and five items are preserved in Graduate School.

2. Course terms: Spring, Autumn , and Spring-Autumn term.  

3. The teaching languages for courses: Chinese, English or Chinese-English.

4. Applicable range of discipline: public, first-class discipline, second-class discipline, and third-class discipline.

5. Practice includes: experiment, investigation, research report, etc.

6. Teaching methods: lecture, seminar, practice, etc.

7. Examination for degree courses must be in paper.

8. Teaching material websites are those which have already been announced.

9. Brief introduction of chief lecturer should include: personal information (date of birth, gender, degree achieved, professional title), research direction, teaching and research achievements. (within 100-500 words)

4. Brief Introduction of Chief lecturer:

Fengyi Huang received the B.S. degree in physics from Peking University, Beijing, China, in 1986, the M.S. degree in physics from Fudan University, Shanghai, China, in 1988, and Ph.D degree from the University of Illinois at Urbana-Champaign (UIUC) in 1994. In 1994, he joined the University of Californiaat Los Angeles (UCLA) as a Postdoctoral ResearchFellow. In August 1997, he joinedthe Microelectronics Division, IBM Corporation. He is currently a Professor withthe Institute of RF and Opto-Electronic Integrated Circuits, College of information science and engineering, Southeast University, Nanjing, China.

He has authored orcoauthored two book chapters on Si processing and devices published by IOP(Institute of Physics) Publishing, U.K., and first-authored over 40 researchpapers in international journals and conferences including Physical ReviewLetters, IEEE JSSC, IEEE EDL, IEEE IEDM, IEEE PHOTONIC TECHNOLOGY LETTERS, Applied PhysicsLetters, and Electronics Letters. He holds 10 U.S. patents. His paper published in IEEE JSSC was selected to be top 30 of “Chinese science research development in 2006”. His research interestsinvolve RF IC design and device modeling.

5. Lecturer Information (include chief lecturer)